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| Power Transistors 2SC3824, 2SC3824A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching 7.00.3 3.50.2 3.00.2 2.00.2 Unit: mm 0 to 0.15 1.10.1 1.00.2 0.750.1 0.40.1 2.30.2 4.60.4 1 2 3 Absolute Maximum Ratings TC = 25C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (E-B short) Collector-emitter voltage 2SC3824 (Base open) 2SC3824A Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Ta = 25C Tj Tstg Symbol VCBO VCES VCEO VEBO IC ICP PC Rating 900 900 800 900 7 1 2 15 1.3 150 -55 to +150 C C V A A W Unit V V V 0.90.1 0 to 0.15 1: Base 2: Collector 3: Emitter I-G1 Package Note) Self-supported type package is also prepared. Electrical Characteristics TC = 25C 3C Parameter Collector-emitter voltage (Base open) 2SC3824 2SC3824A ICBO IEBO hFE1 hFE2 Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Turn-on time Storage time Fall time VCE(sat) VBE(sat) fT ton tstg tf VCB = 900 V, IE = 0 VEB = 7 V, IC = 0 VCE = 5 V, IC = 0.05 A VCE = 5 V, IC = 0.5 A IC = 0.2 A, IB = 0.04 A IC = 0.2 A, IB = 0.04 A VCE = 10 V, IC = 0.05 A, f = 1 MHz IC = 0.2 A IB1 = 0.04 A, IB2 = - 0.08 A VCC = 250 V 4 1.0 3.0 1.0 6 3 1.5 1.0 V V MHz s s s Symbol VCEO Conditions IC = 1 mA, IB = 0 Min 800 900 50 50 A A Typ Max Unit V Collector-base cutoff current (Emitter open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2.50.2 * High-speed switching * High collector-base voltage (Emitter open) VCBO * I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment 12.60.3 7.20.3 (1.0) (1.0) 2.50.2 Features Publication date: March 2003 SJD00113AED 1 2SC3824, 2SC3824A PC Ta 20 1.2 (1)TC=Ta (3)Without heat sink (PC=1.3W) TC=25C IB=200mA IC VCE Collector-emitter saturation voltage VCE(sat) (V) IC/IB=5 VCE(sat) IC TC=100C 25C Collector power dissipation PC (W) 1.0 Collector current IC (A) 15 (1) 1 0.8 10 0.6 100mA 90mA 80mA 70mA 60mA 50mA 40mA 30mA 20mA 10mA -25C 0.1 0.4 5 (2) 0.2 0 0 0 40 80 120 160 0 2 4 6 8 10 12 0.01 0.01 0.1 1 Ambient temperature Ta (C) Collector-emitter voltage VCE (V) Collector current IC (A) VBE(sat) IC Base-emitter saturation voltage VBE(sat) (V) IC/IB=5 hFE IC 1 000 VCE=5V fT I C VCE=10V f=1MHz TC=25C 100 Forward current transfer ratio hFE 1 TC=-25C 100C 25C TC=100C Transition frequency fT (MHz) 25C 100 10 -25C 10 0.1 1 1 0.01 0.01 0.1 1 0.1 0.01 0.1 1 0.1 10-3 10-2 10-1 1 Collector current IC (A) Collector current IC (A) Collector current IC (A) ton , tstg , tf IC Turn-on time ton , Storage time tstg , Fall time tf (s) 100 Pulsed tw=1ms Duty cycle=1% IC/IB=5 (2IB1=-IB2) VCC=250V TC=25C Safe operation area 10 ICP Non repetitive pulse TC=25C Collector current IC (A) 10 1 IC t=10ms t=300ms t=1ms 1 tstg 10-1 0.01 0 0.2 0.4 0.6 0.8 1.0 10-3 1 10 100 Collector current IC (A) Collector-emitter voltage VCE (V) 2 SJD00113AED 2SC3824A 2SC3824 0.1 ton tf 10-2 1 000 2SC3824, 2SC3824A Safe operation area (Reverse bias) 4 L=100H IC/IB=5 (2IB1=-IB2) TC=25C Safe operation area (Reverse bias) measurement circuit Collector current IC (A) 3 L IB1 T.U.T IC 2 ICP VIN IC -IB2 VCC 1 tw 0 0 400 800 1200 1600 VCLAMP Collector-emitter voltage VCE (V) Rth t 103 (1)Without heat sink (2)With a 50x50x2mm Al heat sink Thermal resistance Rth (C/W) 102 (1) (2) 10 1 10-1 10-3 10-2 10-1 1 10 102 103 Time t (s) SJD00113AED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL |
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